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? semiconductor components industries, llc, 2011 may, 2011 ? rev. 1 1 publication order number: ncv8570b/d ncv8570b 200 ma, ultra low noise, high psrr, ldo, linear voltage regulator the ncv8570b is a 200 ma low dropout, linear voltage regulator with ultra low noise characteristics. it?s low noise combined with high power supply rejection ratio (psrr) make it especially suited for use in rf, audio or imaging applications. the device is manufactured in an advanced bicmos process to provide a powerful combination of low noise and excellent dynamic performance but with very low ground current consumption at full loads. the ncv8570b is stable with small, low value capacitors allowing designers to minimise the total pcb space occupied by the solution. the device is packaged in a small 2x2.2mm dfn6 package as well as in a tsop-5 package. features ? ultra low noise (typ. 10 vrms @ v out = 1.8 v) ? very high psrr (typ. 82 db @ 1 khz) ? excellent line and load regulation ? stable with ceramic output capacitors as low as 1 f ? very low ground current (typ. 75 a @ i out = 200 ma) ? low sleep mode current (max. 1 a) ? active discharge circuit ? current limit and thermal shutdown protection ? aec qualified ? ppap capable ? ncv prefix for automotive and other applications requiring aec ? q100 qualified site and change controls ? output voltage options: ? 1.8 v, 2.8 v, 3.0 v, 3.3 v ? contact factory for other voltage options ? these are pb ? free devices applications ? satellite and hd radio ? portable/built ? in dvd entertainment systems ? noise sensitive applications (rf, video, audio) ? gps systems ? camera for lane change detection and reverse view http://onsemi.com see detailed ordering, marking and shipping information in the package dimensions section on page 19 of this data sheet. ordering information dfn6, 2x2.2 mn suffix case 506ba marking diagrams pin connections xx = specific device code m = date code = pb ? free package* (*note: microdot may be in either location) (top view) 1 2 3 6 5 4 en gnd in byp gnd out 1 6 xx m 1 1 5 tsop ? 5 sn suffix case 483 1 5 xxxayw xxx = specific device code a = assembly location y = year w = work week = pb ? free package* (*note: microdot may be in either location) 1 5 in gnd en out byp (top view)
ncv8570b http://onsemi.com 2 ncv8570b in en out byp gnd on off 3 1 2, 5, epad 4 6 figure 1. ncv8570b typical application schematic c out 1 f c noise 10 nf c in 1 f v in v out dfn6 2x2.2 r pd r dis figure 2. simplified block diagram pin function description pin no. dfn6 pin no. tsop ? 5 pin name description 1 3 en enable pin: this pin allows on/off control of the regulator. to disable the device, connect to gnd. if this function is not in use, connect to vin. internal 5 m pull down resistor is con- nected between en and gnd. 2, 5, epad 2 gnd power supply ground (pins are fused for the dfn6 package). pins 2, 5 and epad are con- nected together through the lead frame in the dfn6 package. 3 1 in power supply input voltage 4 5 out regulated output voltage 6 4 byp noise reduction pin. (connect 10 nf or 100 nf capacitor to gnd)
ncv8570b http://onsemi.com 3 maximum ratings rating symbol value unit input voltage (note 2) in ? 0.3 v to 6 v v chip enable voltage en ? 0.3 v to v in +0.3 v noise reduction voltage byp ? 0.3 v to v in +0.3 v v output voltage out ? 0.3 v to v in +0.3 v v output short ? circuit duration infinity maximum junction temperature t j(max) 125 c storage temperature range t stg ? 55 to 150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. this device series contains esd protection and exceeds the following tests: human body model 2000 v tested per mil ? std ? 883, method 3015 machine model method 200 v this device meets or exceeds aec ? q100 standard. thermal characteristics rating symbol value unit package thermal resistance, dfn6: (notes 2, 3) junction ? to ? case (pin 2) junction ? to ? ambient jl2 r ja 108 153 c /w package thermal resistance, tsop ? 5: (notes 2, 3) junction ? to ? case (pin 2) junction ? to ? ambient jl2 r ja 92 204 c /w 2. refer to application information for safe operating area 3. single component mounted on 1 oz, fr4 pcb with 645mm 2 cu area.
ncv8570b http://onsemi.com 4 electrical characteristics v in = v out + 0.5 v or 2.5 v (whichever is greater), v en = 1.2 v, c in = c out = 1 f, c noise = 10 nf, i out = 1 ma, t j = ? 40 c to 125 c, unless otherwise specified (note 4) parameter test conditions symbol min typ max unit regulator output input voltage range v in 2.5 ? 5.5 v output voltage 1.8 v 2.8 v 3.0 v 3.3 v v in = (v out + 0.5 v) to 5.5 v i out = 1 ma to 200 ma v out 1.755 2.730 2.925 3.2175 ( ? 2.5%) ? ? ? ? 1.845 2.870 3.075 3.3825 (+2.5%) v power supply ripple rejection v in = v out +1.0 v, i out = 1 ma to 150 ma f = 120 hz f = 1 khz f = 10 khz psrr ? ? ? 80 82 63 ? ? ? db line regulation v in = (v out +0.5 v) to 5.5 v, i out = 1 ma v out / v in ? 0.1 ? 0.1 %/v load regulation i out = 1 ma to 200 ma v out / i out ? 0.2 5.0 mv output noise voltage v out = 1.8 v, f = 10 hz to 100 khz, i out = 1 ma to 150 ma c noise = 100 nf c noise = 10 nf v n ? ? 10 15 ? ? v rms output current limit v out = v out(nom) ? 0.1 v i lim 200 310 470 ma output short circuit current v out = 0v i sc 205 320 490 ma dropout voltage (note 5) i out = 150 ma v out(nom) = 2.8 v v out(nom) = 3.0 v v out(nom) = 3.3 v v do ? ? ? 90 85 80 165 150 145 mv dropout voltage (note 5) i out = 200 ma v out(nom) = 2.8 v v out(nom) = 3.0 v v out(nom) = 3.3 v v do ? ? ? 120 115 110 205 190 185 mv general ground current i out = 1 ma i out = 200 ma i gnd ? ? 70 75 110 130 a disable current v en = 0 v i dis ? 0.1 1.0 a thermal shutdown shutdown, temperature increasing t sdu ? 150 ? c reset, temperature decreasing t sdd ? 135 ? c output enable enable threshold low high v th(en) ? 1.2 ? ? 0.4 ? v internal pull ? down resistance (note 6) r pd(en) 2.5 5.0 10 m timing turn ? on time i out = 10 ma, v out = 0.975 v out(nom) c noise = 10 nf c noise = 100 nf t on ? ? 0.4 4.0 ? ? ms turn ? off time c noise = 10nf/100nf, v out = 0.1 v out(nom) i out = 1 ma i out = 10 ma t off ? ? 2.0 0.6 ? ? ms 4. performance guaranteed over the indicated operating temperature range by design and/or characterization tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 5. measured when the output voltage falls 100 mv below the nominal output voltage (nominal output voltage is the voltage at the output meas - ured under the condition v in = v out + 0.5 v). in the case of devices having the nominal output voltage v out = 1.8 v the minimum input to output voltage differential is given by the v in(min) = 2.5 v. 6. expected to disable the device when en pin is floating.
ncv8570b http://onsemi.com 5 typical characteristics 1.764 1.776 1.788 1.800 1.812 1.824 1.836 figure 3. output voltage vs. junction temperature, v out = 1.8 v t j , junction temperature ( c) v out , output voltage (v) v in = 2.5 v, c in = c out = 1 f, c noise = 10 nf ? 40 ? 20 0 20 40 60 80 100 120 2.7440 2.7627 2.7813 2.8000 2.8187 2.8373 2.8560 v out , output voltage (v) figure 4. output voltage vs. junction temperature, v out = 2.8 v t j , junction temperature ( c) v in = 3.3 v, c in = c out = 1 f, c noise = 10 nf ? 40 ? 20 0 20 40 60 80 100 120 2.94 2.96 2.98 3.00 3.02 3.04 3.06 v out , output voltage (v) figure 5. output voltage vs. junction temperature, v out = 3.0 v t j , junction temperature ( c) v in = 3.5 v, c in = c out = 1 f, c noise = 10 nf ? 40 ? 20 0 20 40 60 80 100 120
ncv8570b http://onsemi.com 6 typical characteristics 3.2340 3.2560 3.2780 3.3000 3.3220 3.3440 3.3660 v out , output voltage (v) figure 6. output voltage vs. junction temperature, v out = 3.3 v t j , junction temperature ( c) v in = 3.8 v, c in = c out = 1 f, c noise = 10 nf ? 40 ? 20 0 20 40 60 80 100 120 0 30 60 90 120 150 180 0 40 80 120 160 200 v do , dropout voltage (mv) i out , output current (ma) figure 7. dropout voltage vs. output current, v out = 2.8 v c in = c out = 1 f, c noise = 10 nf t j = 125 c t j = 25 c t j = ? 40 c 0 30 60 90 120 150 180 0 40 80 120 160 200 v do , dropout voltage (mv) i out , output current (ma) figure 8. dropout voltage vs. output current, v out = 3.0 v c in = c out = 1 f, c noise = 10 nf t j = 125 c t j = 25 c t j = ? 40 c 0 30 60 90 120 150 180 0 40 80 120 160 200 v do , dropout voltage (mv) i out , output current (ma) figure 9. dropout voltage vs. output current, v out = 3.3 v c in = c out = 1 f, c noise = 10 nf t j = 125 c t j = 25 c t j = ? 40 c
ncv8570b http://onsemi.com 7 typical characteristics 0 10 20 30 40 50 60 70 80 90 100 10 100 1k 10k 100k 1m figure 10. psrr vs. frequency, 1.8 v output voltage option, c out = 1 f, c noise = 10 nf frequency (hz) psrr (db) t a = 25 c, c noise = 10 nf, c out = 1 f, v out = 1.8 v, v in = 3.0 vdc 50 mvac i out = 10 ma i out = 150 ma i out = 200 ma 0 10 20 30 40 50 60 70 80 90 100 110 10 100 1k 10k 100k 1m figure 11. psrr vs. frequency, 1.8 v output voltage option, c out = 1 f, c noise = 100nf frequency (hz) psrr (db) t a = 25 c, c noise = 100 nf, c out = 1 f, v out = 1.8 v, v in = 3.0 vdc 50 mvac i out = 10 ma i out = 150 ma i out = 200 ma 0 10 20 30 40 50 60 70 80 90 100 frequency (hz) psrr (db) 10 100 1k 10k 100k 1m figure 12. psrr vs. frequency, 1.8 v output voltage option, c out = 4.7 f, c noise = 10 nf t a = 25 c, c noise = 10 nf, c out = 4.7 f, v out = 1.8 v, v in = 3.0 vdc 50 mvac i out = 10 ma i out = 150 ma i out = 200 ma 0 10 20 30 40 50 60 70 80 90 100 110 120 10 100 1k 10k 100k 1m frequency (hz) psrr (db) figure 13. psrr vs. frequency, 1.8v output voltage option, c out = 4.7 f, c noise = 100nf t a = 25 c, c noise = 100 nf, c out = 4.7 f, v out = 1.8 v, v in = 3.0 vdc 50 mvac i out = 10 ma i out = 150 ma i out = 200 ma 0 10 20 30 40 50 60 70 80 90 100 110 frequency (hz) psrr (db) 10 100 1k 10k 100k 1m figure 14. psrr vs. frequency, 2.8 v output voltage option, c out = 1 f, c noise = 10 nf t a = 25 c, c noise = 10 nf, c out = 1 f, v out = 2.8 v, v in = 3.3 vdc 50 mvac i out = 10 ma i out = 150 ma i out = 200 ma 0 10 20 30 40 50 60 70 80 90 100 110 10 100 1k 10k 100k 1m frequency (hz) psrr (db) figure 15. psrr vs. frequency, 2.8 v output voltage option, c out = 1 f, c noise = 100 nf i out = 10 ma i out = 150 ma i out = 200 ma t a = 25 c, c noise = 100 nf, c out = 1 f, v out = 2.8 v, v in = 3.3 vdc 50 mvac
ncv8570b http://onsemi.com 8 typical characteristics 0 10 20 30 40 50 60 70 80 90 100 110 figure 16. psrr vs. frequency, 2.8 v output voltage option, c out = 4.7 f, c noise = 10 nf frequency (hz) psrr (db) 10 100 1k 10k 100k 1m i out = 10 ma i out = 150 ma i out = 200 ma t a = 25 c, c noise = 10 nf, c out = 4.7 f, v out = 2.8 v, v in = 3.3 vdc 50 mvac 0 10 20 30 40 50 60 70 80 90 100 110 figure 17. psrr vs. frequency, 2.8 v output voltage option, c out = 4.7 f, c noise = 100 nf frequency (hz) psrr (db) 10 100 1k 10k 100k 1m i out = 10 ma i out = 150 ma i out = 200 ma t a = 25 c, c noise = 100 nf, c out = 4.7 f, v out = 2.8 v, v in = 3.3 vdc 50 mvac 0.01 0.10 1.0 10 figure 18. output noise vs. frequency, c out = 1 f, c noise = 10 nf, i out = 50 ma frequency (hz) 10 100 1k 10k 100k 1m output voltage noise ( v/ hz ) i out = 50 ma, c out = 1 f, c noise = 10 nf v in = v out = +0.5 v or 2.5 v, whichever is higher v out = 1.8 v 10 hz ? 100 khz integral noise: v n = 14.9 v rms v out = 3.3 v 10 hz ? 100 khz integral noise: v n = 25.3 v rms v out = 2.8 v 10 hz ? 100 khz integral noise: v n = 22.6 v rms 0.01 0.10 1.0 10 figure 19. output noise vs. frequency, c out = 1 f, c noise = 100 nf, i out = 50 ma frequency (hz) 10 100 1k 10k 100k 1m output voltage noise ( v/ hz ) i out = 50 ma, c out = 1 f, c noise = 100 nf v in = v out = +0.5 v or 2.5 v, whichever is higher v out = 2.8 v 10 hz ? 100 khz integral noise: v n = 11.7 v rms v out = 3.3 v 10 hz ? 100 khz integral noise: v n = 11.9 v rms v out = 1.8 v 10 hz ? 100 khz integral noise: v n = 9.4 v rms 0.01 0.10 1.0 10 frequency (hz) output voltage noise ( v/ hz ) figure 20. output noise vs. frequency, c out = 1 f, c noise = 10 nf, i out = 200 ma 10 100 1k 10k 100k 1m i out = 200 ma, c out = 1 f, c noise = 10 nf v in = v out = +0.5 v or 2.5 v, whichever is higher v out = 1.8 v 10 hz ? 100 khz integral noise: v n = 15 v rms v out = 3.3 v 10 hz ? 100 khz integral noise: v n = 22.85 v rms v out = 2.8 v 10 hz ? 100 khz integral noise: v n = 22.7 v rms 0.01 0.10 1.0 10 frequency (hz) 10 100 1k 10k 100k 1m output voltage noise ( v/ hz ) figure 21. output noise vs. frequency, c out = 1 f, c noise = 100 nf, i out = 200 ma v out = 1.8 v 10 hz ? 100 khz integral noise: v n = 9.5 v rms v out = 3.3 v 10 hz ? 100 khz integral noise: v n = 12 v rms v out = 2.8 v 10 hz ? 100 khz integral noise: v n = 11.7 v rms i out = 200 ma, c out = 1 f, c noise = 100 nf v in = v out = +0.5 v or 2.5 v, whichever is higher
ncv8570b http://onsemi.com 9 typical characteristics 5 10 15 20 25 30 35 0 50 100 150 200 250 300 350 400 450 500 figure 22. output noise vs. noise bypass capacitance, c out = 1 f, v out = 3.3 v, i out = 200 ma c noise , noise bypass capacitor (nf) 10 hz to 100 khz rms output noise ( v rms ) t a = 25 c, c out = 1 f, v out = 3.3 v, i out = 200 ma v in = 3.8 v figure 23. output noise vs. output capacitance, c noise = 100 nf, v out = 3.3 v, i out = 200 ma 0 2 4 6 8 10 12 14 16 18 20 13579111315171921 10 hz to 100 khz rms output noise ( v rms ) c out , output capacitor ( f) t a = 25 c, c noise = 100 nf, v out = 3.3 v, i out = 200 ma v in = 3.8 v 10 12 14 16 18 20 22 24 26 28 30 0 25 50 75 100 125 150 175 200 10 hz to 100 khz rms output noise ( v rms ) i out , output current (ma) figure 24. output noise vs. load current, c noise = 10 nf, c out = 1 f v out = 3.3 v v out = 2.8 v v out = 1.8 v t a = 25 c, c noise = 10 nf, c out = 1 f, v in = v out + 0.5 v or 2.5 v, whichever is higher 5 6 7 8 9 10 11 12 13 14 15 0 25 50 75 100 125 150 175 20 0 i out , output current (ma) figure 25. output noise vs. load current, c noise = 100 nf, c out = 1 f 10 hz to 100 khz rms output noise ( v rms ) t a = 25 c, c noise = 100 nf, c out = 1 f, v in = v out + 0.5 v or 2.5 v, whichever is higher v out = 3.3 v v out = 2.8 v v out = 1.8 v 1.60 1.65 1.70 1.75 1.80 1.85 0 40 80 120 160 200 240 280 320 360 400 0 100 200 300 v out , output voltage (v) t, time ( s) figure 26. load transient response, v out = 1.8 v, c out = 4.7 f, c noise = 100 nf i out , output current (ma) 1 ma 200 ma c out = 4.7 f, v in = 2.5 v, c noise = 100 nf, di out /dt = 200 ma / 1 s
ncv8570b http://onsemi.com 10 typical characteristics 1.60 1.65 1.70 1.75 1.80 1.85 1.90 0 40 80 120 160 200 240 280 320 360 400 0 100 200 300 v out , output voltage (v) t, time ( s) figure 27. load transient response, v out = 1.8 v, c out = 1 f, c noise = 100 nf i out , output current (ma) 1 ma 200 ma v out , output voltage (v) t, time ( s) figure 28. load transient response, v out = 3.3 v, c out = 4.7 f, c noise = 100 nf i out , output current (ma) 1 ma 200 ma 3.10 3.15 3.20 3.25 3.30 3.35 3.40 0 40 80 120 160 200 240 280 320 360 400 0 100 200 300 v out , output voltage (v) t, time ( s) figure 29. load transient response, v out = 3.3 v, c out = 1 f, c noise = 100 nf i out , output current (ma) 1 ma 200 ma 3.10 3.15 3.20 3.25 3.30 3.35 3.40 0 40 80 120 160 200 240 280 320 360 400 0 100 200 300 c out = 1 f, v in = 2.5 v, c noise = 100 nf, di out /dt = 200 ma / 1 s c out = 4.7 f, v in = 3.8 v, c noise = 100 nf, di out /dt = 200 ma / 1 s c out = 1 f, v in = 3.8 v, c noise = 100 nf, di out /dt = 200 ma / 1 s
ncv8570b http://onsemi.com 11 typical characteristics 1.780 1.785 1.790 1.795 1.800 1.805 1.810 0 20 40 60 80 100 120 140 160 180 200 2.5 3.0 3.5 4.0 v out , output voltage (v) t, time ( s) figure 30. line transient response, v out = 1.8 v, c out = 1 f, i out = 30 ma v in , input voltage (v) v in = 2.5 v v in = 3.5 v 1.780 1.785 1.790 1.795 1.800 1.805 1.810 0 20 40 60 80 100 120 140 160 180 200 2.5 3.0 3.5 4.0 v out , output voltage (v) t, time ( s) figure 31. line transient response, v out = 1.8 v, c out = 1 f, i out = 200 ma v in , input voltage (v) v in = 2.5 v v in = 3.5 v c out = 1 f, v in = 2.5 v, c noise = 100 nf, i out = 30 ma, dv in /dt = 1 v / 1 s c out = 1 f, v in = 2.5 v, c noise = 100 nf, i out = 200 ma, dv in /dt = 1 v / 1 s 2.980 2.985 2.990 2.995 3.000 3.005 3.010 0 20 40 60 80 100 120 140 160 180 200 3.5 4.0 4.5 5.0 v out , output voltage (v) t, time ( s) figure 32. line transient response, v out = 3.0 v, c out = 1 f, i out = 30 ma v in , input voltage (v) v in = 3.5 v v in = 4.5 v c out = 1 f, v in = 3.5 v, c noise = 100 nf, i out = 30 ma, dv in /dt = 1 v / 1 s
ncv8570b http://onsemi.com 12 typical characteristics 2.980 2.985 2.990 2.995 3.000 3.005 3.010 0 20 40 60 80 100 120 140 160 180 200 3.5 4.0 4.5 5.0 v out , output voltage (v) t, time ( s) figure 33. line transient response, v out = 3.0 v, c out = 1 f, i out = 200 ma v in , input voltage (v) v in = 3.5 v v in = 4.5 v c out = 1 f, v in = 3.5 v, c noise = 100 nf, i out = 200 ma, dv in /dt = 1 v / 1 s ? 1.0 0.0 1.0 2.0 3.0 4.0 0 2 4 6 8 10 12 14 16 0.0 1.9 3.8 5.7 v out , output voltage (v) t, time (ms) figure 34. turn ? on response v out = 3.3 v, c out = 1 f, i out = 30 ma v en , enable voltage (v) v en = 3.8 v c noise = 47 nf c noise = 100 nf c noise = 220 nf c noise = 10 nf c out = 1 f, v in = 3.8 v v en = 0 v ? 1.0 0.0 1.0 2.0 3.0 4.0 0246810121416 0.00 1.75 3.50 5.25 v out , output voltage (v) t, time (ms) figure 35. turn ? on response v out = 3 v, c out = 1 f, i out = 30 ma v en , enable voltage (v) v en = 3.5 v v en = 0 v c noise = 47 nf c noise = 220 nf c noise = 10 nf c out = 1 f, v in = 3.5 v c noise = 100 nf
ncv8570b http://onsemi.com 13 typical characteristics ? 0.5 0.0 0.5 1.0 1.5 2.0 012345678910 0 1 2 3 v out , output voltage (v) t, time (ms) figure 36. turn ? on response v out = 1.8 v, c out = 1 f, i out = 30 ma v en , enable voltage (v) v en = 2.5 v v en = 0 v c noise = 47 nf c noise = 220 nf c noise = 10 nf c out = 1 f, v in = 2.5 v c noise = 100 nf ? 1.0 0.0 1.0 2.0 3.0 4.0 012345678910 0.0 1.9 3.8 5.7 v out , output voltage (v) t, time (ms) figure 37. turn ? off response v out = 3.3 v, c out = 1 f v en , enable voltage (v) v en = 3.8 v v en = 0 v r rload = 22 c noise = 10 nf, t j = 25 c r rload = 110 r rload = 3.3 k ? 1.0 0.0 1.0 2.0 3.0 012345678910 0.00 1.75 3.50 5.25 v out , output voltage (v) t, time (ms) figure 38. turn ? off response v out = 3 v, c out = 1 f v en , enable voltage (v) v en = 3.5 v v en = 0 v c noise = 10 nf, t j = 25 c r rload = 20 r rload = 100 r rload = 3 k
ncv8570b http://onsemi.com 14 typical characteristics ? 0.5 0.0 0.5 1.0 1.5 2.0 012345678910 0 1.25 2.5 3.75 v out , output voltage (v) t, time (ms) figure 39. turn ? off response v out = 1.8 v, c out = 1 f v en , enable voltage (v) v en = 2.5 v v en = 0 v c noise = 10 nf, t j = 25 c r rload = 12 r rload = 60 r rload = 1.8 k 0 2 4 6 8 10 12 0 20 40 60 80 100 120 140 160 180 200 220 240 t on , turn ? on time (ms) c noise , noise bypass capacitance (nf) figure 40. turn ? on time vs. noise bypass capacitance, c out = 1 f, i out = 0 ma ? 200 ma v out = 3.3 v v out = 3 v v out = 1.8 v t j = 25 c, i out = 0 ma ? 200 ma ? 1 0 1 2 3 4 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 200 400 600 800 v out , output voltage (v) i out , output current (ma) t, time (ms) figure 41. short ? circuit protection, v out = 3 v, c out = 1 f, c noise = 100 nf short ? circuit i out = 325 ma v out = 0 v normal operation i out = 1 ma v out = 3 v i out = 1 ma c noise = 100 nf ? 1.0 0 1.0 2.0 3.0 4.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 0 100 200 300 400 v out , output voltage (v) i out , output current (ma) v in , input voltage (v) figure 42. short ? circuit current vs. junction temperature, v out = 1.8 v, 3.3 v normal operation thermal shutdown i out = 200 ma v out = 3 v i out = 200 ma c noise = 100 nf 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 v out , output voltage (v) v in , input voltage (v) t j = 25 c t j = ? 40 c t j = 125 c i out = 10 ma c noise = 100 nf figure 43. thermal shutdown protection v out = 3 v, c noise = 100 nf, c out = 1 f figure 44. output voltage vs. input voltage, v out = 1.8 v, c out = 1 f 250 267 283 300 317 333 350 t j , junction temperature ( c) i sc , short ? circuit current (ma) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ? 40 ? 20 0 20 40 60 80 100 120 v in = v out + 0.5 v, c in = c out = 1 f, c noise = 10 nf v out = 3.3 v v out = 1.8 v
ncv8570b http://onsemi.com 15 typical characteristics 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 v out , output voltage (v) v in , input voltage (v) figure 45. output voltage vs. input voltage, v out = 2.8 v, c out = 1 f t j = 25 c t j = ? 40 c t j = 125 c i out = 10 ma c noise = 100 nf 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00 3.25 3.50 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 v in , input voltage (v) figure 46. output voltage vs. input voltage, v out = 3.3 v, c out = 1 f v out , output voltage (v) t j = ? 40 c t j = 125 c t j = 25 c i out = 10 ma c noise = 100 nf 1.8081 1.8082 1.8083 1.8084 1.8085 1.8086 1.8087 1.8088 1.8089 1.8090 1.8091 2.5 3 3.5 4 4.5 5 5.5 v out , output voltage (v) v in , input voltage (v) figure 47. output voltage vs. input voltage, v out = 1.8 v, c out = 1 f t j = 25 c i out = 10 ma c noise = 100 nf 2.8028 2.8029 2.8030 2.8031 2.8032 2.8033 2.8034 2.8035 2.8036 2.8037 2.8038 3 3.5 4 4.5 5 5.5 v out , output voltage (v) v in , input voltage (v) figure 48. output voltage vs. input voltage, v out = 2.8 v, c out = 1 f t j = 25 c i out = 10 ma c noise = 100 nf 3.3119 3.3120 3.3121 3.3122 3.3123 3.3124 3.3125 3.3126 3.3127 3.3128 3.3129 3.5 4 4.5 5 5.5 v out , output voltage (v) v in , input voltage (v) figure 49. output voltage vs. input voltage, v out = 3.3 v, c out = 1 f t j = 25 c i out = 10 ma c noise = 100 nf 0 10 20 30 40 50 60 70 80 90 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 i q , quiescent current ( a) v in , input voltage (v) figure 50. quiescent current vs. input voltage, v out = 2.8 v, c out = 1 f t j = 25 c t j = ? 40 c t j = 125 c v out = 2.8 v c out = 1 f
ncv8570b http://onsemi.com 16 typical characteristics 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 i q , quiescent current ( a) v in , input voltage (v) figure 51. quiescent current vs. input voltage, v out = 3.3 v, c out = 1 f t j = 25 c t j = ? 40 c t j = 125 c v out = 3.3 v c out = 1 f 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 180 200 c in = c out = 1 f, c noise = 10 nf i q , quiescent current ( a) i out , output current (ma) figure 52. quiescent current vs. output current, v out = 3.3 v t j = 25 c t j = ? 40 c t j = 125 c 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 180 200 i q , quiescent current ( a) i out , output current (ma) figure 53. quiescent current vs. output current, v out = 3.0 v c in = c out = 1 f, c noise = 10 nf t j = 25 c t j = ? 40 c t j = 125 c 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 180 200 i q , quiescent current ( a) c in = c out = 1 f, c noise = 10 nf i out , output current (ma) figure 54. quiescent current vs. output current, v out = 2.8 v t j = 25 c t j = ? 40 c t j = 125 c 20 30 40 50 60 70 80 90 100 110 0 20 40 60 80 100 120 140 160 180 200 i q , quiescent current ( a) i out , output current (ma) figure 55. quiescent current vs. output current, v out = 1.8 v c in = c out = 1 f, c noise = 10 nf t j = 25 c t j = ? 40 c t j = 125 c 0.01 0.1 1 10 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 v out = 1.8 v, 2.8 v, 3.3 v, c in = c out = 1 f, c noise = 10 nf, vin = vout + 0.5 v or 2.5 v whichever is higher. i out , output current (a) figure 56. output capacitor esr vs. output current c out esr, output capacitor ( ) v out = 3.3 v v out = 2.8 v v out = 1.8 v unstable operation region stable operation region
ncv8570b http://onsemi.com 17 applications information general the ncv8570b is a high performance 200 ma low dropout linear regulator. this device delivers excellent noise and dynamic performance consuming only 75 a (typ) quiescent current at full load, with the psrr of (typ) 82 db at 1 khz. excellent load transient performance and small package size makes the device ideal for portable applications. logic en input provides on/off control of the output voltage. when the en is low the device consumes as low as typically 0.1 a. access to the major contributor of noise within the integrated ci rcuit ? bandgap reference is provided through the byp pin. this allows bypassing the source of noise by the noise reduction capacitor and reaching noise levels below 10 v rms . the device is fully protected in case of output short circuit condition and overheating assuring a very robust design. input capacitor requirements (c in ) it is recommended to connect a 1 f ceramic capacitor between in pin and gnd pin of the device. this capacitor will provide a low impedance path for unwanted ac signals or noise present on the input voltage. the input capacitor will also limit the influence of input trace inductances and power supply resistance during sudden load current changes. higher capacitances will improve the line transient response. output capacitor requirements (c out ) the ncv8570b has been designed to work with low esr ceramic capacitors on the output. the device will also work with other types of capacitors until the minimum value of capacitance is assured and the capacitor esr is within the specified range. generally it is recommended to use 1 f or larger x5r or x7r ceramic capacitor on the output pin. noise bypass capacitor requirements (c noise ) the c noise capacitor is connected directly to the high impedance node. any loading on this pin like the connection of oscilloscope probe, or the c noise capacitor leakage will cause a voltage drop in regulated output voltage. the minimum recommended value of noise bypass capacitor is 10 nf. values below 10 nf should be avoided due to possible turn ? on overshoot. particular value should be chosen based on the output noise requirements (figure 22). larger values of c noise will improve the output noise and psrr but will increase the regulator turn ? on time. enable operation the enable function is controlled by the logic pin en. the voltage threshold of this pin is set between 0.4 v and 1.2 v. voltage lower than 0.4 v guarantees the device is off. voltage higher than 1.2 v guarantees the device is on. the ncv8570b enters a sleep mode when in the off state drawing less than typically 0.1 a of quiescent current. the internal 5 m pull ? down resistor (r pd ) assures that the device is turned off when en pin is not connected. the device can be used as a simple regulator without use of the chip enable feature by tying the en to the in pin. active discharge active discharge circuitry has been implemented to insure a fast v out turn off time. when en goes low, the active discharge transistor turns on creating a path to discharge the output capacitor c out through 1 k (r dis ) resistor. turn ? on time the turn ? on time of the regulator is defined as the time needed to reach the output voltage which is 98% v out after assertion of the en pin. this time is determined by the noise bypass capacitance c noise and nominal output voltage level v out according the following formula: t on [s] c noise [f] v out [v] 68 10 ? 6 [a] (eq. 1) example: using c noise = 100 nf, v out = 3 v, c out = 1 f, t on 100 10 ? 9 3 68 10 ? 6 4.41 ms the turn ? on time is independent of the load current and output capacitor c out . to avoid output voltage overshoot during turn ? on please select c noise 10 nf. current limit output current is internally limited within the ic to a typical 310 ma. the ncv8570b will source this amount of current measured with a voltage 100 mv lower than the typical operating output voltage. if the output voltage is directly shorted to ground (v out = 0 v), the short circuit protection will limit the output current to 320 ma (typ). the current limit and short circuit protection will work properly up to v in = 5.5 v at t a = 25 c. there is no limitation for the short circuit duration. thermal shutdown when the die temperature exceeds the thermal shutdown threshold (t sdu ? 150 c typical), thermal shutdown event is detected and the output (v out ) is turned off. the ic will remain in this state until the die temperature decreases below the thermal shutdown reset threshold (t sdu ? 135 c typical). once the ic temperature falls below the 135 c the ldo is turned ? on again. the thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. this protection is not intended to be used as a substitute for proper heat sinking. reverse current the pmos pass transistor has an inherent body diode which will conduct the current in case that the v out > v in .
ncv8570b http://onsemi.com 18 such condition could exist in the case of pulling the v in voltage to ground. then the output capacitor voltage will be partially dischar ged through the pmos body diode. it have been verified that the device will not be damaged if the output capacitance is less than 22 f. if however larger output capacitors are used or extended reverse current condition is anticipated the device may require additional external protection against the excessive reverse current. output noise if we neglect the noise coming from the (in) input pin of the ldo, the main contributor of noise present on the output pin (out) is the internal bandgap reference. this is because any noise which is generated at this node will be subsequently amplified through the error amplifier and the pmos pass device. access to the bandgap reference node is supplied through the byp pin. for the 1.8 v output voltage option noise can be reduced from a typical value of 15 vrms by using 10 nf to less than 10 vrms by using a 100 nf from the byp pin to ground. for more information please refer to figures 22 through 24. minimum load current ncv8570b does not require any minimum load current for stability. the minimum load current is assured by the internal circuitry. power dissipation for given ambient temperature t a and thermal resistance r ja the maximum device power dissipation can be calculated by: p d(max) t j(max) t a ja (eq. 2) the actual power dissipation can be calculated by the formula: p d v in v out i out v in i gnd (eq. 3) 150 170 190 210 230 250 270 290 310 0 100 200 300 400 500 600 700 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 figure 57. thermal resistance and maximum power dissipation vs. copper area (tsop ? 5) ja , junction ? to ? ambient thermal resistance ( c/w) pcb copper area (mm 2 ) p d(max) , t a = 25 c, 1 oz cu thickness p d(max) , maximum power dissipation (w) p d(max) , t a = 25 c, 2 oz cu thickness ja , 1 oz cu thickness ja , 2 oz cu thickness 80 100 120 140 160 180 200 220 240 0 100 200 300 400 500 600 700 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.65 0.70 figure 58. thermal resistance and maximum power dissipation vs. copper area (dfn6) ja , junction ? to ? ambient thermal resistance ( c/w) pcb copper area (mm 2 ) p d(max) , t a = 25 c, 1 oz cu thickness p d(max) , t a = 25 c, 2 oz cu thickness ja , 1 oz cu thickness ja , 2 oz cu thickness 260 280 0.75 0.80 p d(max) , maximum power dissipation (w) load regulation the ncv8570b features very good load regulation of 5 mv max. in 0 ma to 200 ma range. in order to achieve this very good load regulation a special attention to pcb design is necessary. the trace resistance from the out pin to the point of load can easily approach 100 m which will cause 20 mv voltage drop at full load current, deteriorating the excellent load regulation. line regulation the ncv8570b features very good line regulation of 0.6mv/v (typ). furthermore the detailed output voltage vs. input voltage characteristics (figures 47 through 49) show that up to v in = 5 v the output v oltage deviation is typically less than 250 v for 1.8 v output voltage option and less than 150 v for higher output voltage options. above the v in = 5 v the output voltage falls rapidly which leads to the typical 0.6 mv/v. power supply rejection ratio the ncv8570b features excellent power supply rejection ratio. the psrr can be tuned by selecting proper c noise and c out capacitors. in the frequency range from 10 hz up to about 10 khz the larger noise bypass capacitor c noise will help to improve the psrr. at the frequencies above 10 khz the addition of higher c out output capacitor will result in improved psrr. pcb layout recommendations connect the input (c in ), output (c out ) and noise bypass capacitors (c noise ) as close as possible to the device pins. the c noise capacitor is connected to high impedance byp pin and thus the length of the trace between the capacitor and the pin should be as small as possible to avoid noise pickup. in order to minimize the solution size use 0402 or 0603 capacitors. to obtain small transient variations and good regulation characteristics place c in and c out capacitors close to the device pins and make the pcb traces wide. larger copper area connected to the pins will also improve the device thermal resistance.
ncv8570b http://onsemi.com 19 ordering information device nominal output voltage marking package shipping ? ncv8570bmn180r2g 1.8 v ak dfn6 2 x 2.2 (pb ? free) 3000 / tape & reel ncv8570bmn280r2g 2.8 v al ncv8570bmn300r2g 3.0 v am ncv8570bmn330r2g 3.3 v an NCV8570BSN18T1G 1.8 v adk tsop ? 5 (pb ? free) 3000 / tape & reel ncv8570bsn28t1g 2.8 v adm ncv8570bsn30t1g 3.0 v adn ncv8570bsn33t1g 3.3 v adp ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ncv8570b http://onsemi.com 20 package dimensions dfn6 2x2.2, 0.65p case 506ba ? 01 issue a notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.15 and 0.20 mm from terminal. 4. coplanarity applies to the exposed pad as well as the terminals. a b e d d2 e2 bottom view b e 6x 0.10 b 0.05 a c c k 6x note 3 2x 0.10 c pin one reference top view 2x 0.10 c 7x a a1 0.08 c 0.10 c c seating plane side view l 6x 1 3 4 6 dim min max millimeters a 0.80 1.00 a1 0.00 0.05 b 0.20 0.30 d 2.00 bsc d2 1.10 1.30 e 2.20 bsc e2 0.70 0.90 e 0.65 bsc k 0.20 ??? l 0.25 0.35 l1 0.00 0.10 l1 6x 0.58 1.36 0.96 1 0.35 0.65 pitch 2.50 6x dimensions: millimeters *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* l1 detail a l alternate terminal constructions ??? package outline
ncv8570b http://onsemi.com 21 package dimensions tsop ? 5 case 483 ? 02 issue h notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. 5. optional construction: an additional trimmed lead is allowed in this location. trimmed lead not to extend more than 0.2 from body. dim min max millimeters a 3.00 bsc b 1.50 bsc c 0.90 1.10 d 0.25 0.50 g 0.95 bsc h 0.01 0.10 j 0.10 0.26 k 0.20 0.60 l 1.25 1.55 m 0 10 s 2.50 3.00 123 54 s a g l b d h c j 0.7 0.028 1.0 0.039 mm inches scale 10:1 0.95 0.037 2.4 0.094 1.9 0.074 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.20 5x c ab t 0.10 2x 2x t 0.20 note 5 t seating plane 0.05 k m detail z detail z on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 ncv8570b/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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